IRLHM630TRPBF
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Specification
长度 | 3.3 mm |
宽度 | 3.3 mm |
电路数量 | 1 Channel |
封装 | PQFN-8(3.1x3.1) |
Pd-功率耗散 | 2.7 W |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 40 A |
Vds-漏源极击穿电压 | 30 V |
Qg-栅极电荷 | 41 nC |
高度 | 1.05 mm |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 12 V |
Rds On-漏源导通电阻 | 3.5 mOhms |
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