IRLHS6376TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 3.6 A |
Rds On - Drain-Source On-Resistance | 63 mOhms |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 2.8 nC |
Configuration | Dual |
Height | 0.9 mm |
Length | 2 mm |
Pd - Power Dissipation | 1.5 W |
Factory packing quantity | 4000 |
Transistor type | 2 N-Channel |
Width | 2 mm |
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