IRLML0100TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 1.6 A |
Rds On - Drain-Source On-Resistance | 235 mOhms |
Vgs th - gate-source threshold voltage | 1 V |
Vgs - gate-source voltage | 16 V |
Qg - gate charge | 2.5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 3.6 ns |
Forward transconductance - minimum | 5.7 s |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 1.3 W |
Rise Time | 2.1 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 9 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
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