IRLMS2002TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSOP-6 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 6.5 A |
Rds On - Drain-Source On-Resistance | 30 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 15 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual Dual Drain |
Fall time | 16 ns |
Forward transconductance - minimum | 13 S |
Height | 1.1 mm |
Length | 3 mm |
Pd - Power Dissipation | 2 W |
Rise Time | 11 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 36 ns |
Typical turn-on delay time | 8.5 ns |
Width | 1.5 mm |
Unit weight | 20 mg |
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