IRLR3410TRPBF
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Specification
Vgs - 栅极-源极电压 | 2V @ 250uA |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
Pd-功率耗散 | 79W |
工作温度范围 | -55°C~175°C(TJ) |
安装方式 | 表面贴装型 |
封装 | TO-252-3 |
Id-连续漏极电流 | 17A |
Rds On-漏源导通电阻 | 105mΩ @ 10A,10V |
Vds-漏源极击穿电压 | 100V |
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