IRLU3110ZPBF
In stock
- IRLU3110ZPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-251-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 63 A |
Rds On - Drain-Source On-Resistance | 16 mOhms |
Vgs - gate-source voltage | 16 V |
Qg - gate charge | 34 nC |
Configuration | Single |
Height | 6.22 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 140 W |
Factory packing quantity | 75 |
Transistor type | 1 N-Channel |
Width | 2.38 mm |
Unit weight | 4 g |
Others include "IRLU3110ZPBF" parts
The following parts include 'IRLU3110ZPBF'
IRLU3110ZPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRLU3110ZPBF
Infineon
Trans MOSFET N-CH Si 100V 63A 3-Pin(3+Tab) IPAK Tube
Learn More >
-
-
-
IRLU3110ZPBF
Infineon
Trans MOSFET N-CH Si 100V 63A 3-Pin(3+Tab) IPAK Tube
Learn More >
-
-
-
IRLU3110ZPBF
Infineon
N沟道,100V,63A,14mΩ@10V
Learn More >
-
- View All Newest Products from Omron