ISP25DP06NMXTSA1
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Specification
Qg-栅极电荷 | - 10.8 nC |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | - 60 V |
Rds On-漏源导通电阻 | 250 mOhms |
Pd-功率耗散 | 4.2 W |
晶体管极性 | MOSFET |
Id-连续漏极电流 | - 1.9 A |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
封装 | SOT-223-4 |
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