SI4410DYTRPBF
Manufacturer:
Mfr. Part #:
SI4410DYTRPBF
Allchips #:
R001-SI4410DYTRPBF-1-H-2029+-X-Y
Description:
N沟道,30V,10A,13.5mΩ@10V
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- SI4410DYTRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,SI4410DYTRPBF is available at Allchips.100% original and new guarantee. If
comprehensive data for SI4410DYTRPBF to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 10 A |
Rds On - Drain-Source On-Resistance | 20 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 30 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Triple Source |
Channel mode | Enhancement |
Fall time | 44 ns |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2.5 W |
Rise Time | 7.7 ns |
Transistor type | 1 N-Channel |
Types | HEXFET Power MOSFET |
Typical shutdown delay time | 38 ns |
Typical turn-on delay time | 11 ns |
Width | 3.9 mm |
Unit weight | 540 mg |
Others include "SI4410DYTRPBF" parts
The following parts include 'SI4410DYTRPBF'
SI4410DYTRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search