SPP20N65C3XKSA1
Manufacturer:
Mfr. Part #:
SPP20N65C3XKSA1
Allchips #:
R001-SPP20N65C3XKSA1-1-H-0000-X-Y
Description:
通孔 N 通道 650V 20.7A(Tc) 208W(Tc) PG-TO220-3-1
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 20.7 A |
Rds On - Drain-Source On-Resistance | 160 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 87 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 4.5 ns |
Forward transconductance - minimum | 17.5 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 208 W |
Rise Time | 5 ns |
Series | CoolMOS C3 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Width | 4.4 mm |
Unit weight | 6 g |
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