SPW11N80C3FKSA1
In stock
- SPW11N80C3FKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Id - continuous drain current | 11 A |
Rds On - Drain-Source On-Resistance | 390 mOhms |
Vgs th - gate-source threshold voltage | 2.1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 85 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Height | 21.1 mm |
Length | 16.13 mm |
Pd - Power Dissipation | 156 W |
Rise Time | 15 ns |
Series | CoolMOS C3 |
Factory packing quantity | 240 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 72 ns |
Typical turn-on delay time | 25 ns |
Width | 5.21 mm |
Unit weight | 38 g |
Others include "SPW11N80C3FKSA1" parts
The following parts include 'SPW11N80C3FKSA1'
SPW11N80C3FKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
SPW11N80C3FKSA1
Infineon
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
SPW11N80C3FKSA1
Infineon
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
-
-
SPW11N80C3FKSA1
Infineon
通孔 N 通道 800V 11A(Tc) 156W(Tc) PG-TO247-3
Learn More >
-
- View All Newest Products from Omron