TH58NYG3S0HBAI6
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Specification
工作电压 | 1.7 V~1.95 V |
安装方式 | SMD/SMT |
封装 | VFBGA-67 |
存储容量 | 8 Gbit |
存储器类型 | NAND |
接口类型 | Parallel |
工作温度范围 | - 40 C~+ 85 C |
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