L2N7002SDW1T1G
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Specification
晶体管极性 | 双N沟道 |
Pd-功率耗散 | 300mW |
Id-连续漏极电流 | 320mA |
Rds On-漏源导通电阻 | 2.8Ω @ 500mA,10V |
Vds-漏源极击穿电压 | -60V |
封装 | SC-88 |
Vgs - 栅极-源极电压 | 2V @ 250uA |
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