LP2301BLT1G
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Specification
Vds-漏源极击穿电压 | 20V |
晶体管极性 | P沟道 |
封装 | SOT-23-3 |
Pd-功率耗散 | 900mW |
Id-连续漏极电流 | 2.8A |
Rds On-漏源导通电阻 | 100mΩ @ 2.8A,4.5V |
Vgs - 栅极-源极电压 | 900mV @ 250uA |
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LP2301BLT1G
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P沟道,-20V,-2.8A,100mΩ@-4.5V
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P沟道,-20V,-2.8A,100mΩ@-4.5V
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P沟道,-20V,-2.8A,100mΩ@-4.5V
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