LP2305DSLT1G
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Specification
封装 | SOT-23-3 |
Vgs - 栅极-源极电压 | 800mV@250uA |
Id-连续漏极电流 | 4A |
晶体管极性 | P沟道 |
Pd-功率耗散 | 1.1W |
Vds-漏源极击穿电压 | -12V |
Rds On-漏源导通电阻 | 68mΩ@3.5A,4.5V |
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LP2305DSLT1G
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P沟道,12V,4A,68mΩ@4.5V LP2305DSLT1G
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P沟道,12V,4A,68mΩ@4.5V LP2305DSLT1G
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