LSIC1MO120E0080
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Specification
Rds On-漏源导通电阻 | 80 mOhms |
封装 | TO-247-3 |
Qg-栅极电荷 | 95 nC |
Vgs - 栅极-源极电压 | 20 V, - 5 V |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 179 W |
电路数量 | 1 Channel |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 39 A |
Vds-漏源极击穿电压 | 1.2 kV |
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通孔 N 通道 1200V 39A(Tc) 179W(Tc) TO-247-3
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