2N7002W-TP
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Specification
Pd-功率耗散 | 200 mW |
Vds-漏源极击穿电压 | 70 V |
Id-连续漏极电流 | 115 mA |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
封装 | SOT-323-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 13.5 Ohms |
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表面贴装型 N 通道 60V 115mA(Ta) 200mW(Ta) SOT-323
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2N7002W-TP
MCC
表面贴装型 N 通道 60V 115mA(Ta) 200mW(Ta) SOT-323
Learn More >
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