SI2310-TP
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Specification
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 105 mOhms |
Pd-功率耗散 | 350 mW |
Qg-栅极电荷 | 6 nC |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 3 A |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
封装 | SOT-23-3 |
工作温度范围 | - 55 C~+ 150 C |
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