2N7000-G
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Specification
封装 | TO-92-3 |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 200 mA |
Vgs - 栅极-源极电压 | 10 V |
高度 | 5.33 mm |
Rds On-漏源导通电阻 | 5 Ohms |
电路数量 | 1 Channel |
Pd-功率耗散 | 1 W |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
长度 | 5.21 mm |
宽度 | 4.19 mm |
安装方式 | Through Hole |
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The following parts include '2N7000-G'
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FEATURED PRODUCT SOMRON
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2N7000-G
Microchip
N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3
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2N7000-D26Z
ON
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R
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2N7000-D75Z
ON
通孔 N 通道 60V 200mA(Ta) 400mW(Ta) TO-92-3
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2N7000-D26Z
ON
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2N7000-D74Z
ON
N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Learn More >
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2N7000-D26Z
ON
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R
Learn More >
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2N7000-D74Z
ON
N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Learn More >
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2N7000-D26Z
ON
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2N7000-D26Z
ON
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R
Learn More >
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2N7000-D26Z
ON
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