DN1509K1-G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-5 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 90 V |
Id - continuous drain current | 200 mA |
Rds On - Drain-Source On-Resistance | 6 Ohms |
Vgs - gate-source voltage | - 3.5 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Depletion |
Fall time | 25 ns |
Height | 1.45 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 490 mW |
Rise Time | 16 ns |
Factory packing quantity | 3000 |
Typical shutdown delay time | 15 ns |
Typical turn-on delay time | 12 ns |
Width | 1.6 mm |
Unit weight | 6.300 mg |
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