DN2535N3-G-P003
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Specification
Id-连续漏极电流 | 120 mA |
Vds-漏源极击穿电压 | 350 V |
工作温度范围 | -55°C~150°C(TJ) |
Rds On-漏源导通电阻 | 25 Ohms |
晶体管极性 | MOSFET |
Pd-功率耗散 | 1W(Tc) |
封装 | TO-92-3 |
电路数量 | 1 Channel |
安装方式 | Through Hole |
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DN2535N3-G-P003
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