DN2625DK6-G
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Specification
电路数量 | 2 Channel |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 7.04 nC |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 3.5 Ohms |
Id-连续漏极电流 | 1.1 A |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
封装 | DFN-8 |
Vds-漏源极击穿电压 | 250 V |
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