TN0106N3-G-P003
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Specification
Vgs - 栅极-源极电压 | 2 V |
Id-连续漏极电流 | 350 mA |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 60 V |
封装 | TO-92-3 |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Rds On-漏源导通电阻 | 4.5 Ohms |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 1 W |
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TN0106N3-G-P003
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MOSFET N-CH 60V 350MA TO92-3
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