TN5325N8-G
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Specification
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 1 Channel |
晶体管极性 | FET |
安装方式 | SMD/SMT |
长度 | 4.6 mm |
宽度 | 2.6 mm |
高度 | 1.6 mm |
Pd-功率耗散 | 1.6 W |
封装 | SOT-89-3 |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 250 V |
Rds On-漏源导通电阻 | 7 Ohms |
Id-连续漏极电流 | 316 mA |
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TN5325N8-G
Microchip
表面贴装型 N 通道 250V 316mA(Tj) 1.6W(Ta) TO-243AA(SOT-89)
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