TN5335K1-G
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Specification
Id-连续漏极电流 | 110 mA |
Rds On-漏源导通电阻 | 15 Ohms |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 360 mW |
封装 | SOT-23-3 |
Vgs - 栅极-源极电压 | 10 V |
长度 | 2.9 mm |
宽度 | 1.3 mm |
高度 | 0.95 mm |
Vds-漏源极击穿电压 | 350 V |
电路数量 | 1 Channel |
晶体管极性 | FET |
安装方式 | SMD/SMT |
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TN5335K1-G
Microchip
表面贴装型 N 通道 350V 110mA(Tj) 360mW(Ta) SOT-23(TO-236AB)
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