VN0106N3-G
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Specification
封装 | TO-92-3 |
Rds On-漏源导通电阻 | 3 Ohms |
长度 | 5.21 mm |
晶体管极性 | FET |
高度 | 5.33 mm |
Pd-功率耗散 | 1 W |
宽度 | 4.19 mm |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 350 mA |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Vds-漏源极击穿电压 | 60 V |
Vgs - 栅极-源极电压 | 10 V |
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