VN10KN3-G-P014
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Specification
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
长度 | 5.21 mm |
宽度 | 4.19 mm |
高度 | 5.33 mm |
Id-连续漏极电流 | 310 mA |
安装方式 | Through Hole |
Pd-功率耗散 | 1 W |
封装 | TO-92-3 |
Vds-漏源极击穿电压 | 60 V |
Vgs - 栅极-源极电压 | 30 V |
Rds On-漏源导通电阻 | 7.5 Ohms |
电路数量 | 1 Channel |
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