APTGTQ200SK65T3G
Manufacturer:
Mfr. Part #:
APTGTQ200SK65T3G
Allchips #:
R001-APTGTQ200SK65T3G-803-H-1701-X-N
Description:
IGBT Power Module
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Specification
类型 | ,晶体管-IGBT-模块 |
集电极—射极饱和电压 | 650V |
工作温度范围 | - 40 C~+ 125 C |
栅极阈值电压-VGE(th) | +/- 20 V |
安装方式 | Chassis Mount |
集电极—发射极最大电压 VCEO | 650 V |
集电极电流Ic | 200 A |
封装 | SP3F |
栅极/发射极最大电压 | +/- 20 V |
Pd-功率耗散 | 483 W |
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