BFU630F,115
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Specification
功率范围 | 200mW |
晶体管类型 | Bipolar |
增益 | 13dB~22.5dB |
封装 | 4-DFP |
安装方式 | 表面贴装型 |
工作温度范围 | 150°C(TJ) |
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BFU630F,115
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RF Transistor NPN 5.5V 30mA 21GHz 200mW Surface Mount 4-DFP
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