MHT1008NT1
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Specification
Transistor polarity | N-Channel |
Id - continuous drain current | 154 mA |
Vds - Drain-Source Breakdown Voltage | - 500 mV, + 65 V |
Technology | Si |
Gain | 18.6 dB |
Output Power | 12.5 W |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | PLD-1.5W |
Minimum working temperature | - 40 C |
Number of channels | 1 Channel |
working frequency | 2.45 GHz |
Pd - Power Dissipation | 48.1 W |
Factory packing quantity | 1000 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | - 6 V, + 10 V |
Vgs th - gate-source threshold voltage | 1.2 V |
Unit weight | 280 mg |
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