2N5551TFR
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Specification
宽度 | 3.93 mm |
电路数量 | Single |
集电极—发射极最大电压 VCEO | 160V |
封装 | TO-92-3L |
长度 | 4.7 mm |
高度 | 4.7 mm |
Pd-功率耗散 | 625mW |
集电极电流Ic | 600mA |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | Through Hole |
晶体管极性 | NPN |
Others include "2N5551TFR" parts
The following parts include '2N5551TFR'
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2N5551TF
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Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
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Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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2N5551TF
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Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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2N5551TF
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Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
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2N5551TF
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Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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2N5551TFR
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NPN
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2N5551TFR
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Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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2N5551TFR
ON
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
Learn More >
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2N5551TFR
ON
NPN
Learn More >
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2N5551TFR
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Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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