2N7000-D75Z
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Specification
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 200 mA |
封装 | TO-92-3 |
Pd-功率耗散 | 400 mW |
高度 | 5.33 mm |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 1.2 Ohms |
工作温度范围 | - 55 C~+ 150 C |
长度 | 5.2 mm |
宽度 | 4.19 mm |
电路数量 | 1 Channel |
安装方式 | Through Hole |
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通孔 N 通道 60V 200mA(Ta) 400mW(Ta) TO-92-3
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