2N7002WT1G
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Specification
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 1.6 Ohms |
长度 | 2.1 mm |
宽度 | 1.24 mm |
高度 | 0.85 mm |
安装方式 | SMD/SMT |
封装 | SOT-323-3 |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 280 mW |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 310 mA |
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