2SK3666-3-TB-E
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Specification
Id-连续漏极电流 | 10 mA |
Pd-功率耗散 | 200 mW |
Rds On-漏源导通电阻 | 200 Ohms |
晶体管极性 | JFET |
Vgs - 栅极-源极电压 | 180mV@1µA |
工作温度范围 | + 150 C |
Vds-漏源极击穿电压 | 30 V |
封装 | SC-59-3 |
安装方式 | SMD/SMT |
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