3LP01M-TL-H
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Specification
Rds On-漏源导通电阻 | 10.4 Ohms |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 100 mA |
Vds-漏源极击穿电压 | 30 V |
Pd-功率耗散 | 150 mW |
Qg-栅极电荷 | 1.43 nC |
封装 | SOT-323-3 |
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