3LP01S-TL-E
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Specification
Pd-功率耗散 | 150mW(Ta) |
Vds-漏源极击穿电压 | 30V |
封装 | SMCP |
安装方式 | 表面贴装 |
工作温度范围 | 150°C(TJ) |
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Trans MOSFET P-CH Si 30V 0.1A 3-Pin SMCP T/R
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