5LP01M-TL-H
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Specification
晶体管极性 | MOSFET",,"子类别 |
Vgs - 栅极-源极电压 | 10 V |
Vds-漏源极击穿电压 | 50 V |
封装 | SOT-323-3 |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 18 Ohms |
Id-连续漏极电流 | 70 mA |
安装方式 | SMD/SMT |
Pd-功率耗散 | 150 mW |
工作温度范围 | - 55 C~+ 150 C |
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