AFGB40T65SQDN
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Specification
Pd-功率耗散 | 238 W |
栅极阈值电压-VGE(th) | 20 V |
封装 | TO-263-3 |
集电极电流Ic | 40 A |
工作温度范围 | - 55 C~+ 175 C |
集电极—发射极最大电压 VCEO | 650 V |
安装方式 | SMD/SMT |
栅极/发射极最大电压 | 20 V |
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IGBT 650V 80A 238W 表面贴装型 D²PAK-3(TO-263-3)
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