BC857BLT1G
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Specification
集电极电流Ic | 100mA |
高度 | 0.94 mm |
晶体管极性 | PNP |
Pd-功率耗散 | 300mW |
电路数量 | Single |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
集电极—发射极最大电压 VCEO | 45V |
长度 | 2.9 mm |
宽度 | 1.3 mm |
封装 | SOT-23-3 |
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PNP Vceo=-50V Ic=-100mA,hfe=200~475(Ic=-2mA,Vce=-5V)
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LBC857BLT1G
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PNP Vceo=-50V Ic=-100mA,hfe=200~475(Ic=-2mA,Vce=-5V)
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LBC857BLT1G
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PNP Vceo=-50V Ic=-100mA,hfe=200~475(Ic=-2mA,Vce=-5V)
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SBC857BLT1G
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晶体管 - 双极 (BJT) - 单 PNP 45V 100mA 100MHz 300mW 表面贴装型 SOT-23-3(TO-236)
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