BSS84LT1G
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Specification
Pd-功率耗散 | 225mW(Ta) |
Vds-漏源极击穿电压 | 50V |
Rds On-漏源导通电阻 | 10Ω @ 100mA,5V |
Id-连续漏极电流 | 130mA |
安装方式 | 表面贴装型 |
封装 | SOT-23-3 |
工作温度范围 | -55°C~150°C(TJ) |
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BSS84LT1G
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Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
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BSS84LT1G
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P沟道,-50V,-0.13A,10Ω@-10V
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P沟道,-50V,-0.13A,10Ω@-10V
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BSS84LT1G
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P沟道,-50V,-0.13A,10Ω@-10V
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LBSS84LT1G
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P沟道,-50V,-0.13A,10Ω@-5V
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SBSS84LT1G
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P沟道,50V,130mA
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LBSS84LT1G
LRC
P沟道,-50V,-0.13A,10Ω@-5V
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LBSS84LT1G
LRC
P沟道,-50V,-0.13A,10Ω@-5V
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SBSS84LT1G
ON
P沟道,50V,130mA
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LBSS84LT1G
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P沟道,-50V,-0.13A,10Ω@-5V
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