BVSS84LT1G
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Specification
Vds-漏源极击穿电压 | 50 V |
电路数量 | 1 Channel |
Id-连续漏极电流 | 130 mA |
Vgs - 栅极-源极电压 | 5 V |
Pd-功率耗散 | 225 mW |
Rds On-漏源导通电阻 | 10 Ohms |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
封装 | SOT-23-3 |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 2.2 nC |
资格等级 | AEC-Q101 |
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