ECH8309-TL-H
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Specification
Pd-功率耗散 | 1.5W(Ta) |
Id-连续漏极电流 | 9.5 A |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
Vds-漏源极击穿电压 | 12 V |
封装 | ECH-8 |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 16 mOhms |
安装方式 | SMD/SMT |
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Trans MOSFET P-CH Si 12V 9.5A 8-Pin ECH T/R
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