ECH8655R-TL-H
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Specification
Vds-漏源极击穿电压 | 24 V |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 17 mOhms |
工作温度范围 | 150°C(TJ) |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 9 A |
封装 | ECH-8 |
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MOSFET - 阵列 2 N-通道(双) 24V 9A 1.5W 表面贴装型 8-ECH
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