ECH8660-TL-H
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Specification
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
电路数量 | 2 Channel |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 1.3 W |
Id-连续漏极电流 | 4.5 A |
封装 | ECH-8 |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 4.4 nC, 10 nC |
Rds On-漏源导通电阻 | 110 mOhms, 82 mOhms |
工作温度范围 | - 55 C~+ 150 C |
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