ECH8695R-TL-W
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Specification
Pd-功率耗散 | 1.4 W |
Vgs - 栅极-源极电压 | 12.5 V |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 11 A |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 24 V |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 9.1 mOhms |
Qg-栅极电荷 | 10 nC |
封装 | ECH-8 |
电路数量 | 2 Channel |
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