ECH8697R-TL-W
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Specification
Vgs - 栅极-源极电压 | 12.5 V |
Pd-功率耗散 | 1.6 W |
Id-连续漏极电流 | 10 A |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
电路数量 | 2 Channel |
封装 | ECH-8 |
Rds On-漏源导通电阻 | 11.6 mOhms |
Vds-漏源极击穿电压 | 24 V |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 6 nC |
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