EFC6612R-TF
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Specification
Qg-栅极电荷 | 27 nC, 27 nC |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
Pd-功率耗散 | 2.5 W |
电路数量 | 2 Channel |
封装 | CSP-6 |
Vgs - 栅极-源极电压 | 12 V |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 4.2 mOhms, 4.2 mOhms |
Others include "EFC6612R-TF" parts
The following parts include 'EFC6612R-TF'
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- efr32bg1b132f256gm48-c
- efm8sb10f4g-a-qfn2
- efm32tg108f8-qfn2
- efr32mg12p432f1024im48-
- efm32g840f32g-e-qfn64
- efm32hg222f32g-b-qfp4
- efm32hg309f32g-b-qfn2
- efm32g200f16g-e-qfn3
- efm32g222f32g-e-qfp4
- efm32tg840f16-qfn6
- efm32g840f64g-e-qfn6
- efr32bg13p532f512gm48-c
- efm32tg842f16-d-qfp64r
- efr32fg1p132f64gm48-c0
- efm32tg225f8-bga4
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