EFC8811R-TF
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Specification
Qg-栅极电荷 | 100 nC |
Vgs - 栅极-源极电压 | 8 V |
工作温度范围 | + 150 C |
晶体管极性 | MOSFET |
封装 | CSP-6 |
Pd-功率耗散 | 2.5 W |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 6.3 mOhms |
Vds-漏源极击穿电压 | 12 V |
电路数量 | 2 Channel |
Id-连续漏极电流 | 27 A |
Others include "EFC8811R-TF" parts
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- eff(007)-240x240t080
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- efm32tg110f4-qfn2
- efm32lg232f256g-f-qfp64r
- efm32wg390f64-b-bga112r
- efm32zg222f32-b-qfp48
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- ef-245
- ef-245 e0040
- ef-245 e
- ef 245 e
- efm32lg330f64g-f-qfn64
- efx(05)-240x24
- efm32lg880f128g-e-qfp100
- efm32hg308f32n-b-qfn24
EFC8811R-TF Releted Information
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FEATURED PRODUCT SOMRON
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EFC8811R-TF
ON
Trans MOSFET N-CH 12V 27A 6-Pin CSP T/R
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EFC8811R-TF
ON
MOSFET - 阵列 2 N 沟道(双)共漏 2.5W 表面贴装型 6-CSP(1.77x3.54)
Learn More >
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EFC8811R-TF
ON
Trans MOSFET N-CH 12V 27A 6-Pin CSP T/R
Learn More >
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