FAM65CR51DZ2
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Specification
Pd-功率耗散 | 160W |
封装 | 12-SSIPExposedPad,FormedLeads |
工作温度范围 | -55°C~150°C(TJ) |
类型 | ,晶体管-IGBT-模块 |
集电极电流Ic | 33A |
安装方式 | 通孔 |
集电极—射极饱和电压 | 650V |
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