FCH041N65EFL4
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Specification
Rds On-漏源导通电阻 | 41 mOhms |
电路数量 | 1 Channel |
长度 | 15.8 mm |
宽度 | 5.2 mm |
Vgs - 栅极-源极电压 | 20 V, 30 V |
晶体管极性 | MOSFET |
封装 | TO-247 |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 229 nC |
高度 | 22.74 mm |
Id-连续漏极电流 | 76 A |
Vds-漏源极击穿电压 | 650 V |
Pd-功率耗散 | 595 W |
安装方式 | Through Hole |
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通孔 N 通道 650V 76A(Tc) 595W(Tc) TO-247
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