FCH077N65F-F085
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Specification
Vds-漏源极击穿电压 | 650 V |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 20 V |
Qg-栅极电荷 | 126 nC |
高度 | 20.82 mm |
Pd-功率耗散 | 481 W |
长度 | 15.87 mm |
宽度 | 4.82 mm |
安装方式 | Through Hole |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 184 mOhms |
封装 | TO-247-3 |
Id-连续漏极电流 | 54 A |
资格等级 | AEC-Q101 |
晶体管极性 | MOSFET |
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